Nanocircuit and self-correcting etching method for fabricating same

ABSTRACT

A self-correcting etching (SCORE) process for fabricating microstructure is provided. The SCORE process of the present invention is particularly useful for reducing preselected features of a hard mask without degrading the variation of the critical dimension (CD) within each wafer. Alternatively; the CD variation of the hard mask features&#39; produced during printing can be substantially reduced by applying SCORE. Hence, ultra-sub-lithographic features (e.g., nanostructures) can be reliably fabricated. Consequently, the method of the present invention can be used to increase the circuit performance, while improving the manufacturing yield.

FIELD OF THE INVENTION

The present invention relates to microstructures, includingnanostructures and nanocircuits, and a method of fabricating the same.More particularly, the present invention relates to a method forself-correcting etching (SCORE) of various microstructures

BACKGROUND OF THE INVENTION

In the field of semiconductor device manufacturing, there is a need forproviding semiconductor devices such as complementary metal oxidesemiconductor (CMOS) devices that contain ultra-sub-lithographicfeatures. That is, there is a need for providing CMOS lines in which thedimensions thereof are less than 0.7 F, wherein F is the minimallithographic dimension related to the wavelength of exposure.

In the prior art, CMOS devices that have a gate microstructure arefabricated using photolithography, which includes the steps of applyinga photoresist and an optional antireflective coating (ARC) to a materialneeding patterning; exposing the photoresist to a pattern of radiationand developing the exposed photoresist; resist, antireflective coating(ARC), or hard mask trimming; and pattern transfer with or withouttrimming.

The prior art process is shown, for example, in FIGS. 1A-1D. Inparticular, FIG. 1A illustrates an intermediate structure afterphotolithography. The intermediate structure includes substrate 10, gatedielectric 12, gate conductor 14, hard mask 16 and a plurality ofpatterned photoresists labeled as 18 a, 18 b and 18 c. Each patternedphotoresist has a line width, L, associated therewith. In the exampleshown, L₁ of patterned photoresist 18 a is greater than L_(nom) ofpatterned photoresist 18 b which is greater than L₂ of patternedphotoresist 18 c. The L_(nom) denotes the actual line width of thepatterned photoresist needed to achieve a desired lithographic feature;in the drawing the dotted region about L₁ and L₂ represents L_(nom). Asshown, the photolithographic processing step inherently introduces avariation in line width, i.e., variation of critical dimension CD, intothe structure. The variation is typically from line to line within acircuit, chip, or wafer. The variation within a single line can also besignificant. FIG. 1A schematically represents all types of line widthvariation.

After providing the patterned photoresists atop the gate structure, thepattern is transferred from the patterned photoresists into the hardmask 16 providing patterned hard masks 16 a, 16 b, and 16 c. As is shownin FIG. 1B, the variation in critical dimension is still present in thestructure after the first pattern transfer step.

To achieve microstructures having an ultra-sub-lithographic feature(about 0.7 F), the patterned hard masks 16 a, 16, and 16 c are typicallytrimmed by a conventional etching process such as an isotropic dry etch,e.g., a COR (chemical oxide removal) etch. Alternatively, anantireflective coating and/or resist itself can be trimmed during thehard mask etching step. Alternatively, the lines themselves can betrimmed during their etching. The later trimming process is oftenreferred to as active trimming. Any combination of trimming processesleads to a sub-lithographic structure of final lines. For simplificationof drawings, the trimming process is shown at the hard mask level. Thestructure formed after the patterned hard masks have been trimmed isshown, for example, in FIG. 1C. The patterned and trimmed hard masks aredenoted as 16 a′, 16 b′ and 16 c′. Note that the variation in criticaldimension is still present in the structure after the patterned hardmasks have been trimmed. Furthermore, the relative variation in CD withrespect to the nominal or average CD increases with any knowncombination of trimming processes.

Following the trimming step, the pattern is transferred from thepatterned and trimmed hard masks into the underlying gate conductor 14using an etching process providing patterned gate conductors 14 a, 14 b,and 14 c. After the second pattern transfer step, the patterned andtrimmed hard masks are typically removed providing the structure shown,for example, in FIG. 1D. The prior art gate microstructure shown in FIG.1D also has a variation in CD.

The variation in CD that results from this prior art process is typicalabout 30% (6 σ, where σ is a standard deviation parameter or range).FIG. 2 shows a typical distribution of the CD variation for the priorart gate microstructure shown in FIG. 1D. Such a high variation in CD isunwanted since it does not permit reliable fabrication ofultra-sub-lithographic features. Additionally, the high variation in CDis unwanted since it hinders device performance and manufacturing yieldand results in a substantial increase of power dissipation.

In view of the drawbacks associated with the prior art process ofproducing microstructures with ultra-sub-lithographic features, there isa need for providing a new and improved method that is capable offabricating microstructures that have ultra-sub-lithographic featuresand a reduced CD variation preferably of less than 10% (6 σ or range).

SUMMARY OF THE INVENTION

One object of the present invention is to provide a method of reducingthe line width to below the lithographic limit such that the method hasa self-correcting property. The term “self-correcting property” denotesthat the width of the wider line is reduced or trimmed faster than thatof the thinner line. Accordingly, the line width variation parameter canbe tightened to below the limit defined by conventionalphotolithography, etching, or deposition.

Another object of present invention is to provide an etching methodsuitable to trim lines of less than about 100-nanometer wide.

A further object of present invention is to provide a structurecomprised of a plurality of trimmed lines such that both the variationof line width and the variation of the distance in between adjacentlines are below the respective limits defined by photolithography.

These and other objects and advantages are achieved in the presentinvention by utilizing a self-correcting etching (SCORE) process. TheSCORE process of the present invention is particularly useful forreducing preselected features of a hard mask without degrading thevariation of the critical dimension (CD) within each wafer.Alternatively, the CD variation of the hard mask features' producedduring printing can be substantially reduced by applying SCORE. Hence,ultra-sub-lithographic features (e.g., nanostructures) can be reliablyfabricated. Consequently, the method of the present invention can beused to increase the circuit performance, while improving themanufacturing yield and reducing power consumption.

In addition, a unique collection of nanostructures (includingnanocircuits) is disclosed. The nanocircuit of the present invention hasa plurality of ultra-sub-lithographic features (less than 0.7 F, where Fis the minimal lithographic dimension related to the wavelength ofexposure light/beam) with CD variation of less than 10% (6 sigma orrange). In one embodiment of the present invention, such integratednanocircuits represent an ultra-high performance logic circuit such as amicroprocessor or a digital signal processor.

As indicated above, one aspect of the present invention relates to amethod of fabricating a microstructure comprising the steps of:

providing a structure comprising a multi-layered stack located atop anetchable material, said multi-layered stack comprising a core materialincluding at least one diffusing element located between top and bottomdiffusion barrier layers;

patterning the multi-layered stack to provide a plurality of patternedmulti-layered stacks on the etchable material, each patternedmulti-layered stack having etched facets;

heating the patterned multi-layered stacks to cause lateral diffusion ofthe at least one diffusing element to the etched facets;

removing the at least one diffusing element from the etched facets;

optionally, covering a subset of patterned features with a block mask toexpose only a plurality of select lines;

performing a self-correcting dopant-sensitive etching process on aplurality of exposed patterned multi-layered stacks to provide patternedlines that have a substantially reduced line width and substantiallyreduced line width variation; and

optionally, etching the underlying etchable material using the patternedlines as an etch mask thereby providing a plurality of microstructureseach having ultra-sub-lithographic features, and substantially the sameline width.

The present invention also relates to a microstructure that isfabricated by the inventive method. Specifically, and in broad terms,the microstructure comprises:

a plurality of one-dimensional structures which satisfy criteria (1) and(2) (to be defined subsequently herein), each having a criticaldimension L that it is less than a minimal feature size F obtainable bylithography or any other patterning, etching, deposition, or shapingtechnique, wherein the plurality of structures have a variation incritical dimension that is less than the ΔL·F/L, where ΔL is the rangeof critical dimension variation obtainable by lithography or any otherpatterning, etching, deposition, or shaping technique which formmicrostructures with minimal feature size F.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1D are pictorial representations (through cross sectionalviews) illustrating the prior art process of fabricating gatemicrostructures having ultra-sub-lithographic features.

FIG. 2 is a graph illustrating a typical distribution of the CDvariation for the gate microstructure shown in FIG. 1D. Frequency ofoccurrence (arbitrary units) is plotted on the y-axis, while(L−L_(nom))/L_(nom) (%) is plotted on the x-axis.

FIG. 3A-3J are pictorial representations (through cross sectional views)illustrating the basic processing steps of the present invention used informing gate micro structures.

FIG. 4 is a plot of the lateral dopant profile after an evaporationanneal for various line widths L; the y-axis is concentration (cm⁻³),while the x-axis is lateral distance (μm).

FIG. 5 is a plot of average concentration remaining in the film afterannealing; the y-axis is concentration (cm⁻³), while the x-axis is gatelength (nm).

FIG. 6 is a plot of dopant concentration (cm⁻³) vs. (1/L_(printed))²(nm²).

FIG. 7 is a plot of the lateral dopant profile after a flatting annealfor various line widths L; the y-axis is concentration (cm⁻³), while thex-axis is lateral distance (μm).

FIG. 8 is a graph illustrating a typical distribution of the CDvariation for the gate microstructure shown in FIG. 3J. Frequency ofoccurrence (arbitrary units) is plotted on the y-axis, while(L−L_(nom))/L_(nom) (%) is plotted on the x-axis.

FIG. 9 is a graph of etch rate (nm/sec) vs. dopant concentration (cm⁻³).

FIG. 10 is a graph of etch rate (nm/sec) vs. gate length (nm).

FIG. 11 is a graph of corrected gate length (nm) vs. printed gate length(nm).

DETAILED DESCRIPTION OF THE INVENTION

The present invention, which provides a method of fabricating structureshaving ultra-sub-lithographic features (less than 0.7 F) and theresultant structures formed therefrom, will now be described in greaterdetail by referring to the drawings that accompany the presentapplication. In the accompanying drawings, like and correspondingelements are referred to by like reference numerals.

Referring to FIGS. 3A-3J, there is shown one possible implementation ofthe present invention for fabricating gate microstructures. Although thedrawings and description that follow are specific for the formation ofgate microstructures, the present invention may be used in fabricatingany microstructure provided that the microstructure includes at leastone etchable material.

Referring to FIG. 3A, there is shown an initial structure 50 that may beemployed in the present invention. The initial structure 50 includes asemiconductor substrate 52, a gate dielectric 54 located on a surface ofthe semiconductor substrate 52 and a gate conductor 56 located on thegate dielectric 54. The semiconductor substrate 52 of the initialstructure 50 includes any semiconducting material including, but notlimited to: Si, SiGe, SiC, SiGeC, GaAs, InAs, InP or other like III/Vcompound semiconductors. The semiconductor substrate 52 may alsocomprise a multilayer structure in which at least the top layer thereofis semiconducting. Illustrative examples of multilayer structuresinclude, for example, Si/SiGe, a silicon-on-insulator (SOI) or aSiGe-on-insulator (SGOI). The semiconductor substrate 52 may alsocomprise various useful structures such as memory cells, isolationstructures (e.g., isolation trenches), dopant wells, three dimensionaltransistor features such as fins and pillars, and buried contacts andinterconnects.

The gate dielectric 54 is formed on a surface of the semiconductorsubstrate 52 by deposition or thermal oxidation, nitridation oroxynitridation. Combinations of the aforementioned processes may also beused in forming the gate dielectric 54. The gate dielectric 54 iscomprised of an insulating material including, but not limited to: anoxide, nitride, oxynitride or any combination thereof.

A highly preferred insulating material that is employed in the presentinvention as the gate dielectric 54 is nitrided SiO₂ or oxynitride.Although it is preferred to use nitrided SiO₂ or oxynitride as the gatedielectric material, the present invention also contemplates usinginsulating materials, i.e., dielectrics, which have a higher or lowerdielectric constant, k, than nitrided SiO₂. For example, the gatedielectric 54 may comprise a oxynitride-nitride stack, a pure nitride, ahigh-k oxide or oxynitride or respective silicate such as Al₂O₃, HfO₂,HfO_(x)N_(y), HfSi_(x)O_(y)N_(z), or a perovskite-type oxide.

The physical thickness of the gate dielectric 54 may vary, but typicallythe gate dielectric 54 has a thickness from about 0.5 to about 20 nm,with a thickness of from about 1.0 to about 10.0 nm being more highlypreferred.

After forming the gate dielectric 54, a gate conductor 56, whichrepresents one type of etchable material that can be used in the presentinvention, is formed on at least the exposed upper surface of the gatedielectric 54. The gate conductor 56 is comprised of a conductivematerial including, but not limited to: elemental metals such as W, Pt,Pd, Ru, Re, fr, Ta, Ti, Al, Mo or combinations, including alloys, andmultilayers thereof; silicides and nitrides of the foregoing elementalmetals; polysilicon either doped or undoped; or combinations andmultilayers thereof. One highly preferred conductive material employedas the gate conductor 56 is doped polysilicon.

The gate conductor 56 is formed utilizing a deposition process such asCVD, plasma-assisted CVD, sputtering, evaporation, chemical solutiondeposition or plating. When metal silicides are employed, a conventionalsilicidation process may be used in forming the same. On the other hand,when doped polysilicon is employed as the gate conductor 56, the dopedpolysilicon may be formed by an in-situ doping deposition process, oralternatively, a layer of undoped silicon is first deposited andthereafter an ion implantation process is employed in doping the undopedpolysilicon. The doping of the undoped polysilicon may occur immediatelyafter deposition or in a later processing step. The material layerspresent in gate conductor layer 56 can be in either amorphous,single-crystal, or polycrystalline form.

The physical thickness of the gate conductor 56 formed at this point ofthe present invention may vary depending on the conductive materialemployed as well as the process used in forming the same. Typically,however, the gate conductor 56 has a thickness from about 20 to about400 nm, with a thickness from about 50 to about 200 nm being more highlypreferred.

In order to achieve the self-correcting property of the presentinvention, a multi-layered stack 58 is formed atop the initial structure50 of FIG. 3A. The multi-layered stack 58, see FIG. 3B, is comprised ofa core material 62, which is located between two thin diffusion barriers60 and 64, respectively.

The core material 62 may comprise various elements with the proviso thatat least one element of the core material 62 can diffuse through thecore material 62 at an elevated temperature. For instance, the corematerial 62 may include one of the commonly used doped glasses, such asfluorinated-doped silicate glass (FSG), phosphorus-doped silicate glass(PSG), boron-doped silicate glass (BSG), boron-and phosphorus-dopedsilicate glass (BPSG), nitrogen-doped glass, or carbon-doped glasswherein the diffusing element is the dopant (e.g., F, P, B, N, or C).Alternatively, the core material 62 may be silicon that is doped with Por As, for example, or a polymer-based material that is doped with afast diffusion element (typically a metal ion) such that thepolymer-based material can withstand the minimal thermal budget ofdepositing the top diffusion barrier 64. The core material 62 is formedusing a conventional deposition process including, for example, spin-oncoating, chemical vapor deposition, plasma-assisted chemical vapordeposition, atomic layer deposition, chemical solution deposition orevaporation. The dopant may be introduced by an in-situ dopingdeposition process, or alternatively, a core material 62 is firstdeposited with or without the dopant and thereafter any other dopingprocess such as an ion implantation or gas phase doping is employed toadd the dopant to the core material 62.

The diffusion barriers 60 and 64 can be deposited at a relatively lowtemperature of about 100° C.-300° C. by employing known low-temperaturedeposition techniques such as, for example, atomic layer deposition(ALD) and/or excitation assisted depositions such as plasma-assistedprocesses. The thickness range of the core material 62 is from about 10nm to about 150 nm, with a thickness range from about 20 nm to about 100nm being more highly preferred. The typical dopant concentration rangein the core material 62 is from about 10¹⁷ cm⁻³ to about 10²² cm⁻³, withthe dopant concentration range from about 10¹⁹ cm⁻³ to about 5·10²¹ cm⁻³being more highly preferred.

The diffusion barriers 60 and 64 may be comprised of the same ordifferent material that is capable of preventing the at least onediffusing element from diffusing vertically from the core material 62.Specifically, the diffusion barriers may comprise silicon nitride, ametal nitride, such as TiN, WN, TaN, or a respective oxynitride. Thethickness of both diffusion barriers 60 and 64 is chosen such that thediffusion barrier layers are thick enough to block vertical diffusion ofthe at least one diffusing element of the core material 62 at aspecified thermal budget. The preferred thickness range of diffusionbarriers 60 and 64 thus depends on the specific thermal budget (to bedefined below) and is from about 1 nm to about 20 nm.

Narrow lines and optional other structures are then formed atop themulti-layered stack 58 providing the structure shown, for example, inFIG. 3B. In particular, the patterned photoresist lines 66 are formedatop the top diffusion barrier 64 of the multi-layered stack 58. Thephotoresist lines 66 may be formed via photolithography.

Photolithography techniques may include various image enhancementmethods such as phase shift masks, multiple exposures, and opticalproximity correction. The line width variation is an inherent drawbackof any line definition process. For the purpose of this invention, theapplicants refer to the smallest line dimension (a critical dimension)as “line width” dimension. In this embodiment, the line width is relatedto the transistor channel length.

FIG. 3B schematically shows such random line width variation by drawingthree different lines with nominal, smaller L₂, and larger L₁ width. Inpractical examples, the line width varies randomly across the chip orwafer and can be represented by a probability density function such asshown, for example, in FIG. 2. The experimental probability densityfunction can be often fitted with a Normal probability distributionfunction with a characteristic parameter σ, i.e., sigma, also known asthe standard deviation.

Next, a patterning step which includes a pattern transfer etchingprocess is used to transfer the pattern, i.e., lines, from the patternedphotoresist into the multi-layered stack 58. The pattern transfer mayinclude a simple dry etching process such as reactive ion etching. Insome embodiments, the pattern transfer etching process may also compriseline trimming including self-limiting trimming. After pattern transferand removal of the photoresist lines 66 have been performed, thestructure shown, for example, in FIG. 3C is formed. Note that the sameline width variation as that of the resist lines 66 is transferred toeach of the patterned multi-layered stacks 58. Such one-to-one transferof line width is not typical and shown here only to simplify drawings.In general, any conventional etching process increases the variation ofthe line width. Furthermore, the line width control is even moredifficult when the nominal line width is close to the resolution limitof photolithography.

In the trimming process, the mask lines are uniformly etched to yieldsmaller lines. While any known trimming process provides a method forreducing nominal line width, it increases the line width variation withrespect to the nominal line width. In general, the line width controlbecomes much more difficult for ultra narrow lines. In the inventivemethod, the transferred line patterns are defined via known techniquesand, consequently, have a relatively large variation at this step of thepresent invention.

After pattern transfer into the multi-layered stack 58 (includingdiffusion barrier layers 60 and 64 and core material 62), the structureshown in FIG. 3C is subjected to a heating step having a specificthermal budget to cause the diffusion of the at least one diffusingelement within the core material 62. The thermal budget of this processis defined via the characteristic diffusion length of diffusing elementL_(d) which is related to the process temperature and the process time.Specifically, per a given diffusing element in a given core material 62,the characteristic diffusion length of diffusing element L_(d) isuniquely related to the process temperature T and the process time τ asL_(d)=(Dτ)^(0.5), where D is the element diffusivity in the corematerial 62 at a given process temperature T.

Accordingly, the process temperature and time are selected such that thecharacteristic diffusion length L_(d) is within a preferred rangespecified below. In one example, the process temperature T is chosenfrom a range supported by commercially available heating equipment,i.e., from about 100° C. to about 1200° C., and the process time isadjusted to get an acceptable value of characteristic diffusion lengthL_(d). The process time is typically selected to be much longer than theduration of any transient processes such as wafer temperature ramp-upand ramp-down. The process temperature is typically selected to besubstantially low not to cause any thermal damage to any of the featurespresent in the substrate and the inventive stack and to be substantiallyhigh to result in the characteristic diffusion length L_(d) of the orderof the nominal line width L_(nom) within a reasonable anneal duration ofless than several hours. Because the diffusion barriers 60 and 64prevent the movement of diffusing element, i.e., dopant, in the verticaldirection, the diffusion process becomes substantially one-dimensionalin the horizontal direction. The diffusing element typically diffusesfrom the center portion to the etched facets 67, i.e., sidewalls, of thepatterned multi-layered stacks 58 and then it is removed from theexposed surfaces. While, for a casual observer, it may appear that theprocesses of diffusion and facet surface removal are happeningsimultaneously, for a given diffusing atom, these processes arehappening in series: first, diffusion to the facet and, then, removalfrom the facet surface. The dopant surface removal process can bebeneficially made faster than the diffusion process within the corematerial 62 such that the overall rate is diffusion limited.

In one embodiment (see, FIG. 3D), the dopant surface removal processcomprises a process of evaporation of the dopant into gaseous phase thatsurrounds the structure. The evaporation process is schematically shownby arrows 68 in FIG. 3D and the change in shading denotes less dopantpresent near the facets 67. The evaporation process rate can beincreased by lowering the ambient pressure or by conducting thermaltreatment in a reactive ambient such that the dopant reacts with the gasspecies at the exposed surfaces to form volatile products. In a neutralambient, the preferred pressure range is from about 0.00001 mTorr toabout 800 Torr. In a reactive ambient, the preferred pressure range isfrom about 0.1 mTorr to about 10000 Torr. In one example, the reactiveambient is comprised of hydrogen, halogens (e.g., fluorine or chlorine),or oxygen such that respective molecules react with the diff-usingdopants to form volatile dopant-H_(x), dopant-halogen, or dopant-O_(y)molecules, respectively.

For some core materials 62 such as silicon, the etched facets 67 shouldbe kept clean to prevent formation of unwanted surface layers such asnative oxides which may slow down dopant removal from the facets. In oneexample, the diffusion element is phosphorus and the core material 62 issilicon. In this example, and in order to speed up the evaporation ofphosphorus from the etched facets, the facets are cleaned directly priorto the heating step in a solution comprised of hydrofluoric acid toremove any native or chemical oxide present on the facet surfaces.

The heating step is conducted in a reducing ambient (e.g., hydrogenambient at a reduced pressure of from about 1 Torr to about 300 Torr,with from about 10 Torr to about 200 Torr being more highly preferred)to remove any oxide residue still present at the facet surfaces.

In the above examples, the reactive ambient can be also be comprised ofrespective radicals or ions rather than molecules. The radicals or ionscan be produced with some form of excitation. The excitation may includedirect or remote electrical discharges, intense electromagneticradiation including infrared, visible, ultraviolet, and X-ray portionsof spectrum, intense remote heat, electron or ion beams, and chemicalprocesses including decomposition of unstable molecules and multi-stepreactions.

In another embodiment (see, FIG. 3E), the dopant surface removal processcomprises a process of diffusion into, accumulation within, or getteringby another material 80 (hereinafter the getter material 80) placed inbetween and atop the etched lines, i.e., patterned multi-layered stacks.As shown in FIG. 3E, the getter material 80 is placed in between andatop the etched lines after the line definition process. The gettermaterial 80 can be deposited by any known method such as, for example,chemical vapor deposition, spin-on coating, plating, or sputteringtechniques. The getter material 80 comprises any material that has theability to quickly accumulate the diffusing element from the corematerial 62.

After the getter material 80 is deposited, the structure is subjected toa specified thermal budget, i.e., heating step, causing the selecteddopant to diffuse from the core material 62 into material 80. Thedirection of dopant diffusion and removal is shown by arrows 68. Becausethe speed of diffusion and accumulation of the dopant in the gettermaterial 80 is much faster than the speed of the dopant diffusion withinthe core material 62, the rate of dopant removal from the boundary ofthe core material 62 is much faster than the characteristic rate ofdiffusion within the core material 62. Therefore, the overall rate ofthe dopant transfer process is diffusion limited within the corematerial 62. After the dopant removal process, the getter material 80 isremoved selective to diffusion barriers 60 and 66 as well as the corematerial 62.

When subjected to a specified thermal budget, the etched lines, i.e.,the patterned multi-layered stacks, lose dopant at the etched facets 67.The dopant loss is highly sensitive to the line width; wider lines loseless dopant than thinner lines. FIGS. 4-6 demonstrate dopant losssensitivity to the line width. The dopant profiles are found in a halfportion of the line through a numerical solution of one-dimensionaldiffusion equation with the following boundary conditions: zerodiffusion current at the point of symmetry (line center) and zero dopantconcentration at the line sidewall. The latter boundary condition is dueto the diffusion-limited nature of the process. The diffusion parametersare taken for phosphorous in polycrystalline silicon. The initialconcentration of dopant in the core material 62 is taken to be about8·10²⁰ cm⁻³. The thermal budget was selected such than thecharacteristic diffusion length is equal to about half of the nominalline. The nominal line is set to be at about 100 nm. The dopant profilesare calculated for different lines with width varying from about 200 nmto about 50 nm. The result of such numerical experiment is shown in FIG.4. It is noted that while the line width varies by a factor of four, theresultant doping level varies by about a factor of ten thousand (4orders of magnitude). The amount of dopant loss is achieved in thepresent invention by comparing the amount of at least one dopant removedfrom the edged facets to that which was originally present therein.

FIG. 5 shows the average concentration of dopant remaining in the lineas a function of line width. FIG. 6 shows that the curve shown in FIG. 5is an exponential function of squared line width. Note that the averagedopant concentration shown in FIGS. 5 and 6 depends linearly on theinitial dopant concentration while it is a very strong function(exponential of a square) of the line width and characteristic diffusionlength. Subsequently, the remaining dopant concentration is also a weakfunction of the thickness of the core material 62.

The key findings of the numerical experimentation can be summarized asfollows:

The average dopant concentration in the line is higher for wider linesand smaller for thinner lines;

If the dopant removal process is diffusion limited, it results in astrong dependence of the remaining dopant concentration on the linewidth and a weak dependence on the initial dopant concentration and,consequently, the thickness of the core material 62;

If the dopant removal process is surface-extraction limited, it resultsin a weak dependence of the remaining dopant concentration on linewidth, thickness of the core material 62, and initial dopantconcentration;

The thermal budget of the dopant removal process is selected such thatthe characteristic diffusion length L_(d) (L_(d)=(Dτ)^(0.5), where D isthe dopant diffusivity in the core material 62, and τ is the processtime, is from about one tenth of the nominal line width to about 10times of the nominal line width.

While the numerical experiment has been carried out for a specificexample of the core material 62, the key conclusions are valid for anycore material 62 provided that it has at least one diffusing elementwhich is removed from etched facets. Because of the strong dependence ofthe remaining dopant concentration on the line width and a weakdependence on the thickness of the core material 62 and/or initialdopant concentration, the diffusion-limited dopant removal process ishighly preferred. The thermal budget range or the ranges of processtemperature and process time are selected to result in the preferredrange of characteristic diffusion length of dopant removal process. Thecharacteristic diffusion length range from about one forth of thenominal line width to about the nominal line width is highly preferred,for the remaining dopant concentration is most sensitive to the linewidth in this range.

The non-uniform dopant profiles of FIG. 4 are not desirable. Flat dopantprofiles are highly preferred to ease the self-correcting etch processcontrol. Therefore, a series of optional steps are added to make thedopant distribution uniform. Although these steps are not required, theyare highly desirable. After dopant removal step and removal of theoptional getter material 80, a thin diffusion barrier 82 is formed onthe sides of the lines, i.e., patterned multi-layered stacks 58,providing the structure shown, for example, in FIG. 3F. Diffusionbarrier 82 can be made from the same material as diffusion barriers 60and 64 or it can be made from a different material. In the former case,the thickness of diffusion barriers 60 and 64 should be larger than thatof the sidewall diffusion barrier 82 such that the diffusion barrier 82can be entirely removed with a timed etch while leaving a portion of thetop diffusion barrier 64. In the latter case, the thickness of barriers60, 64 and 82 can be chosen independently provided that there is ahighly selective etch for the removal of diffusion barrier 82 withlittle affect on diffusion barriers 60 and 64 and the core material 62.

After depositing the diffusion barrier 82, the structure is subjected toa thermal treatment to flatten the dopant profile within the patternedlines. Such a procedure has been simulated numerically for the conditionof the above example and the result is shown in FIG. 7. The dopantprofile is flat for each of the lines and the dopant concentration isequal to the average dopant concentration used in FIGS. 4 and 5. The setof patterned lines of provided in FIG. 3F is substantially differentfrom that of the patterned lines in the previous drawings because auniform dopant concentration in the core material 62 is a function ofline width. In FIG. 3F, the wide line on the far left has much moredopant as compared to a thinner lines to the right.

Next, the sidewall diffusion barrier 82 is removed from the structure toexpose the sidewalls, i.e., etched facets 67, of the core material 62;see FIG. 3G. The removal process can be carried out using an isotropicdry or wet etching techniques. The etching mixtures are selected to besubstantially inert to the core material 62.

Next, a self-correcting etch of the core material 62 is used to reducethe line width variation of the patterned lines shown in FIGS. 3D, 3E or3F. This is schematically shown in FIG. 3H. The self-correcting etch isa slow isotropic etch with the etch rate sensitive to the doping levelof the core material 62. Specifically, the self-correcting etch removeshighly doped core material faster than lightly doped core material. Atypical etch rate dependence on the dopant concentration is shown inFIG. 9. As shown in FIG. 9, etch rate is a logarithmic function ofdopant concentration above some certain threshold concentration ofdopant. The threshold dopant concentration is typically about 10¹⁹ cm⁻³.The etch rate below the threshold and its sensitivity to the dopantlevel above the threshold both depend on specific adjustable parametersof the etching mixture. Accordingly, the etch rate can be adjusted bymodifying active chemical dilution ratio, process temperature, solutionacidity (pH) in the case of wet etch, and ambient pressure in the caseof dry etch.

A dopant-sensitive chemical conversion process can also be a part of theself-correcting etching or trimming process. In such process, the corematerial 62 is chemically altered with the rate sensitive to the dopinglevel and then the altered material is etched away. In one example, thecore material 62 is doped silicon and the chemical conversion reactionis an oxidation reaction. In addition, the introduction of chemicalinhibitors or catalysts can be employed to alter the etch rate and itssensitivity to the dopant. The functional dependence of the etch rate onthe dopant concentration can be made stronger than the typicallogarithmic dependence. For instance, the dopant of the core material 62can be a catalyst of the etching reaction resulting in a strong(polynomial) dependence of the etch rate on the amount of dopant. Suchvery sensitive etches are desirable for correcting lines with a weakdopant variation such as the case of surface-extraction limited dopantremoval process described above. Typical logarithmic etch is well suitedfor correcting lines with a strong dopant variation such as the case ofdiffusion-limited dopant removal process described above. FIG. 11 showscorrected line width (width of etched core material 62) as a function ofthe original line width in the case of the logarithmic etch of FIG. 9applied to the lines with the dopant distribution shown in FIG. 8.Printed lines with nominal width of about 100 nm and the variation rangeof ±20 nm are corrected to form a line set with nominal width of about40 nm and the variation range of ±4 nm.

Accordingly, the applicants of the present application have obtained aunique set of trimmed lines with the nominal line width reduced by afactor of 2.5 and the line width variation as measured by the standarddeviation or range (relative to the nominal line width) reduced by afactor of 2. A typical statistical distribution of line variation isshown in FIG. 8. Therefore, the inventive method allows for defining aplurality of narrow lines with the nominal width of F/α, where F is theminimal line width defined by a particular conventional line definitionprocess (e.g., photolithography, imprint lithography, spacer imagetransfer lithography, etc.) and α(α>1) is the line reduction factor, andthe line width variation as measured by the standard deviation or range(relative to the nominal line width) much smaller than the line widthvariation of the original line definition process at F nominal widthmultiplied by the line reduction factor α.

In the example of transistor gate definition process, the correctedlines are used as a hard mask for defining the gates from the gateconductor 56. Such line image transfer process can be accomplished usinga directional etch such as a reactive ion etch. This process is shown inFIGS. 3I and 3J. The remains of diffusion barriers 64 can be optionallyremoved by either isotropic or directional etch prior to etching thecore material 62. The removal process can be carried out using isotropicdry or wet etching techniques. The chemistry of diffusion barrier etchis selected to be inert to the core material 62. The gate conductor 56is etched with a directional etch which is substantially selective tothe core material 62. The gate conductor etch may include several stepswith different etching chemistries to better control the sidewallprofile and to stop on the gate dielectric 54. The final gate structureis shown in FIG. 3J where the mask structure of the present invention isomitted. According to the inventive method, the physical gate length(line width) variation of the final gate line is substantially improved.

The applicants also note that the described self-correcting techniquecan be employed to reduce the variation of spacing between two adjacentand parallel lines. In an ultra dense pattern of parallel lines, thelines are spaced at a minimal distance F. The variation of spacingbetween adjacent lines is due to both variation of distance between linecenters (line center is a line middle point in the width direction) andvariation of line width. Often, the variation of line width is adominant component to the variation of spacing between adjacent lines.By using the inventive self-correcting method, the line width variationcan be substantially reduced and, consequently, the variation of spacingbetween adjacent lines will be substantially improved and defined by thevariation of distance between adjacent line centers.

The self-correcting property of the inventive method relies on theone-dimensional nature of the structure (set of lines) coupled with theone-dimensional nature of the diffusion process (the vertical diffusionis suppressed by the diffusion barriers 60 and 64). As long as suchone-dimensional coupling exists between the structure and theself-correcting process, the inventive method can be applied tostructures other than the mask structure for the set of lines.Furthermore, a set of complex structures can be divided into simplerstructures suitable for trimming and correcting using the inventivemethod. Such division of complex structures can be accomplished bydisposing a block mask prior to the self-correcting etch. This isillustrated in several examples. In addition, the requirements for theconcept of one-dimensional coupling are quantified.

In one example, a set of small disks or cylinders represents aone-dimensional structure similar to that of the set of lines. Thestructure is completely defined by only one parameter: the disk radius.The disk mask structure is similar to that of the structure shown inFIGS. 3C and 3D. The diffusion process within the disk depends only onthe radial component. The diffusion along cylinder axis is suppressed bythe presence of diffusion barriers similar to the barrier layer used forthe lines. Consequently, there is no difference between the disks andthe cylinders. Because the one-dimensional diffusion process is slightlydifferent in radial coordinates, the functional dependence of theaverage remaining dopant within the disks on disk radii will be somewhatdifferent than that of the average remaining dopant within the lines onlines width. Yet, the system of disks behaves very similar to the systemof lines showing the same strong functional dependence of dopant in thecase of diffusion-limited extraction regime and a high sensitivity tothe disk radius (when characteristic diffusion length is comparable tothe nominal disk radius). Therefore, the inventive method is readilyapplicable for trimming or correcting the size of a plurality of smalldisks.

In another example, the length (or height) of a set of cylinders can becorrected using the inventive method. The cylinders or rods arecomprised of the core material 62 and are wrapped around with adiffusion barrier 60. The barrier 60 may be in the form of a spacer forvertically oriented cylinders or rods. The cylinder may represent anopening in a substrate filled with the core material 62. In this case,the substrate may contain the diffusion barrier 60 or the diffusionbarrier 60 can be deposited into the opening prior to depositing thecore material 62. The diffusion barrier 60 does not cover at least oneof cylinder ends. In such configuration, the dopant diffusion process issubstantially one-dimensional with respect to cylinder axis coordinate.Applicants note that the cylinder cross section may have any shape(circular, rectangular, star, pentagon, etc.) as long as it does notvary much with cylinder length. The variation of cylinder cross sectionshape has a similar effect as the variation of the core material 62thickness in case of the lines shown in FIG. 3D. As indicated above, adiffusion-limited dopant removal process depends weakly on the initialdopant concentration or, equivalently, the volume variation due to thecross section variation. Therefore, the inventive method is still usefulfor a set of cylinders with varying cross section shape (within eachcylinder and from cylinder to cylinder) provided that the cylinder crosssection variation accounts for less than about 30% of cylinder volumevariation.

Applicants also note that in a limiting case when cylinder radius (orequivalent characteristic dimension) is much larger than the length ofits axis, a cylinder becomes a film island with length of cylinder axisbeing the island (film) thickness. If island thickness is much less (5times less, for example) than its characteristic size, the diffusionbarriers are not required, for the central portion of the island has aone-dimensional diffusion process. The island can be as large as theentire wafer. For instance, in this case, the inventive method can beemployed to reduce the thickness variations of a silicon-on-insulator(SOI) layer over an entire SOI substrate.

In some useful applications, only a subset of structures has aone-dimensional symmetry suitable for the application of the inventivemethod. As eluded above, the inventive method can be applied in suchcases with the aid of extra block mask(s). For example, an optionalphotoresist block mask is disposed immediately prior to theself-correcting etching step. The mask covers structures without therequired one-dimensional symmetry and/or any other structures that needno (or reduced) trimming or correction and exposes the subset ofstructures for self-correcting etch. One useful example for applyingsuch optional mask is the process of trimming/correcting the transistorgate structures in integrated circuits. Typical gate conductor structurecan be roughly divided into a subset of very narrow gates and otherwider structures. The narrow gates run over the active area and formhigh-performance transistors while wider gate structures are used ascontact-landing pads, local interconnects, and gates of specializedtransistors.

In most cases, the narrow gates are connected to at least one largergate section. Apparently, the subset of narrow long lines has theone-dimensional symmetry suitable for the inventive method.Nevertheless, other structures may or may not have such symmetry.Furthermore, it is often desirable to preserve the original size of somegate conductor structures. For instance, a certain minimal size ofcontact-landing pad is needed to accommodate an electrical contact froman upper level. Alternatively, the gate of a specialized transistor isintentionally designed larger than minimal feature size. In the presenceof excessive trimming, the pad or the gate of specialized transistorwill be intentionally designed larger than its minimal size in order toaccount for trimming. Such built-in trimming design margin may result ina substantial reduction of component density per unit of area. Thepenalty in the component density is highly undesirable.

In addition, complex structures may have points of symmetry loss whichmay be adversely affected by the self-correcting etch. For instance, thejunction between a wider section of the gate conductor and a narrow gateline is a point of symmetry loss which leads to the loss ofself-correcting etch property in the vicinity of the junction.Accordingly, the narrow gate line in the vicinity of the junction may beseverely over etched. The optional block mask addresses all theseconcerns by simply exposing narrow lines with one-dimensional symmetryand covering other gate structures including junctions between thenarrow lines and wider sections. The characteristic size of edgesymmetry distortion is the characteristic diffusion length. Because thecharacteristic diffusion length is selected to be of the order of theline width, the influence of edge symmetry distortion substantiallydecays at the scale of one line width from the edge. Therefore, it ishighly desirable that the block mask covers a small portion of thenarrow line adjacent to the junction with other gate structures(symmetry distortion point), the small portion being equal or largerthan the line width.

While the benefit of block mask has been shown using gate line example,the mask is also useful in other cases where one needs to select asubset of structures with one-dimensional properties suitable for theinventive method. For instance, in the case of film islands describedabove, the mask can be used to cover the island edge where the diffusionprocess is not one-dimensional.

Applicants have shown that the inventive method results in an improvedstructure with minimized critical dimension variation if applied to aset of one-dimensional structures also have shown that the block maskcan be used to select such one-dimensional structures. In the following,applicants define the criteria of what set of structures can beconsidered one-dimensional and point to the several limitations of theinventive method.

The set of structures of interest has a critical dimension L which mayvary from structure to structure. According to the present invention,the structures will be subjected to the diffusion process with thecharacteristic diffusion length L_(d) equal or smaller than the criticaldimension L. Because the sensitivity of diffusion process on ageometrical perturbation quickly decreases within the length scale ofseveral L_(d), the original structures can be divided into substantiallystatistically independent sections of size 3 L if their dimensionsexceed 3 L. For instance, long and narrow lines with width ofapproximately L are divided into 3 L sections whereas the large filmislands with approximate thickness L are divided into 3 L by 3 Lsections. The mathematical division process may also result in a numberof fractional structures with the dimension of less than 3 L. Forinstance, a 7 L-long line can be mathematically divided into two 3L-long sections plus one fractional 1 L-long section. To simplify theanalysis, applicants did not consider the fractional sections but allowthe minimal statistically independent sections to be of different lengthfrom 3 L to 6 L. The whole point of such mathematical division is toobtain a set of statistically independent (with respect to the diffusionprocess) structures with minimal dimensions. The applicants have shownthat any original large structure can be divided into substantiallystatistically independent sections of size of between 3 L and 6 L iftheir dimensions exceed 3 L. Some original structures such as a set ofnarrow and long vertically oriented cylinders or rods with varyingheight cannot be divided into smaller section because theircharacteristic measure of cross section is smaller than the criticaldimension (height). Therefore, the collection of minimal statisticallyindependent sections (either from the process of mathematical divisionor original) forms a new set of structures on which we define severalrandom functions and provide the one-dimensionality test using theserandom functions.

The variation of critical dimension L from structure to structure ischaracterized by the mean value of L, L_(nom) and a standard deviationparameter σ_(L) in accordance with the generally accepted statisticalprincipals. For practical purposes σ_(L) is limited to below 10% ofL_(nom).

The first requirement of one-dimensionality is a limitation of criticaldimension variation within each structure within the set. The variationof L within each structure should be substantially smaller than thevariation of L from structure to structure. The standard deviation of Lwithin each structure is limited to half of standard deviation of L fromstructure to structure. One can express such limitation in mathematicalterms:var(L _(max) −L _(min))<0.5 var(L _(ave))=σ_(L)<5%,   (1)

where L_(max), L_(min), L_(ave) are maximum, minimal, and average valueof L for each structure (section) in the set, and var(. . . ) is asymbol for standard deviation (variance) of a random function. Note thatL_(max), L_(min), L_(ave) are random functions defined on the newlydefined set of minimal structures.

The second requirement of one-dimensionality is a restriction on thestructure volume variation due to the variation in two dimensions otherthan the critical dimension L. That is, the variation of the structurevolume V should primarily be due to the variation of critical dimensionL. The variation of critical dimension L is required to account for morethan 60% of the volume variation. One can express this requirement inmathematical terms:var(V)<1.67 var(L _(ave))=1.67 σ_(L),   (2)

where V is the structure volume. Note that V is also a random functiondefined on the set of minimal structures.

While the present invention has been particularly shown and describedwith respect to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in formsand details may be made without departing from the spirit and scope ofthe present invention. It is therefore intended that the presentinvention not be limited to the exact forms and details described andillustrated, but fall within the scope of the appended claims.

1-16. (canceled)
 17. A microstructure comprising: a plurality ofone-dimensional structures, each having a critical dimension L that itis less than a minimal feature size F obtainable by lithography, or anyeither patterning, etching, deposition or shaping technique, wherein theplurality of structures have a variation in critical dimension that isless than the ΔL·F/L, where ΔL is the range of critical dimensionvariation obtainable by lithography or any other patterning, etching,deposition, or shaping technique which forms microstructure with minimalfeature size F.
 18. The microstructure of claim 17 wherein the pluralityof structures are one-dimensional structures which satisfy thefollowing:var(L _(max) −L _(min))<0.5 var(L _(ave))=σ_(L)<5%,   (1) where L_(max),L_(min), L_(ave) are maximum, minimal, and average value of L for eachstructure and var is a symbol for standard deviation of a randomfunction; andvar(V)<1.67 var(L _(ave))=1.67 σ_(L),   (2) where V is the structurevolume.
 19. The microstructure of claim 17 wherein the plurality ofstructures are gates of a CMOS device, cylinders or disks.
 20. Themicrostructure of claim 17 wherein the plurality of structures areparallel periodic lines having a width L and a spatial period equal toor less than 2 F, and variation of spacing between adjacent linesubstantially equal to the variation of distance between adjacent linecenters, the line centers being the line middle point in the widthdirection.